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HM5551 - NPN EPITAXIAL PLANAR TRANSISTOR

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Hi-Sincerity Mocroelectronics

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HM5551 NPN EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – HM5551

Datasheet Details

Part number	HM5551
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	41.08 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HM5551 Datasheet
Note	This datasheet PDF includes multiple part numbers: HM5551, HM5551_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HM5551 datasheet.

Product details

Description

The HM5551 is designed for general purpose applications requiring high breakdown voltages.

Features

High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA).
Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.2 W.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.

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Other Datasheets by Hi-Sincerity Mocroelectronics

HM5401 - NPN EPITAXIAL PLANAR TRANSISTOR

Published: Mar 26, 2005 |