HM5551 Datasheet - Hi-Sincerity Mocroelectronics

HM5551 NPN EPITAXIAL PLANAR TRANSISTOR

HM5551 Features

* High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)

* Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Di

Datasheet Details

HM5551

Hi-Sincerity Mocroelectronics

41.08 KB

Npn epitaxial planar transistor.

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