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HM5551, HM5551_Hi Datasheet - Hi-Sincerity Mocroelectronics

HM5551, HM5551_Hi, NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP.HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page.
The HM5551 is designed for general purpose applications requiring high breakdown voltages. High collector-emitter breakdown voltage.
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HM5551_Hi-SincerityMocroelectronics.pdf

This datasheet PDF includes multiple part numbers: HM5551, HM5551_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HM5551, HM5551_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

41.08 KB

Description:

NPN EPITAXIAL PLANAR TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: HM5551, HM5551_Hi.
Please refer to the document for exact specifications by model.

Features

* High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)
* Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Di

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