* High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)
* Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Di
HM5551
Hi-Sincerity Mocroelectronics
41.08 KB
Npn epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
HM5551
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page.
📁 Related Datasheet
HM55 PRECISION METAL FILM RESISTORS (RCD)
HM55 Shielded Drum Compact Package Low Cost Inductors (TT)
HM551 HM500 Series / Ac/Dc Switching Modules (Artesyn Technologies)
HM552 HM500 Series / Ac/Dc Switching Modules (Artesyn Technologies)
HM5565A One Cell Lithium-ion/Polymer Battery Protection IC (H&M semi)
HM55N03D N-Channel Enhancement Mode Power MOSFET (H&M semi)
HM50 HM50 / HM51 Series / Miniature Power Inductors (BI Technologies)
HM50-xxx HM50 / HM51 Series / Miniature Power Inductors (BI Technologies)
HM500 HM500 Series / Ac/Dc Switching Modules (Artesyn Technologies)
HM501C PFM boost DC-DC converter (H&M Semiconductor)
