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HM5551 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HM5551, a member of the HM5551_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HM5551 is designed for general purpose applications requiring high breakdown voltages.

Features

  • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA).
  • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.2 W.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.

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Datasheet preview – HM5551

Datasheet Details

Part number HM5551
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.08 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HM5551 Datasheet
Additional preview pages of the HM5551 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No. : 1/4 Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. Features • High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) • Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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