HM5551 Features
* High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)
* Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Di
HM5551_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HM5551, HM5551_Hi
Hi-Sincerity Mocroelectronics
41.08 KB
Npn epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: HM5551, HM5551_Hi.
Please refer to the document for exact specifications by model.
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