HM5551, HM5551_Hi Datasheet - Hi-Sincerity Mocroelectronics

HM5551 - NPN EPITAXIAL PLANAR TRANSISTOR

HM5551 Features

* High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA)

* Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Di

Datasheet Details

HM5551, HM5551_Hi

Hi-Sincerity Mocroelectronics

41.08 KB

Npn epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HM5551, HM5551_Hi.
Please refer to the document for exact specifications by model.

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