HMBT1815

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HMBT1815 General Description

The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings SOT-23

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (T.

HMBT1815 Datasheet (41.02 KB)

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HMBT1815

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Hi-Sincerity Mocroelectronics

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41.02 KB

Description:

Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2004.08.13 Pa.

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HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HMBT1815 General Description

Datasheet Details

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