HMBT2369 - NPN EPITAXIAL PLANAR TRANSISTOR
HMBT2369 Features
* Low Collector Saturation Voltage
* High speed switching Transistor SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW