HMBT2369, HMBT2369_Hi Datasheet - Hi-Sincerity Mocroelectronics

HMBT2369 - NPN EPITAXIAL PLANAR TRANSISTOR

HMBT2369 Features

* Low Collector Saturation Voltage

* High speed switching Transistor SOT-23 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW

Datasheet Details

HMBT2369, HMBT2369_Hi

Hi-Sincerity Mocroelectronics

38.77 KB

Npn epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HMBT2369, HMBT2369_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags