HMBT2369, HMBT2369_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HMBT2369, HMBT2369_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	38.77 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HMBT2369_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HMBT2369, HMBT2369_Hi. Please refer to the document for exact specifications by model.

The HMBT2369 is designed for general purpose switching and amplifier applications.

Low Collector Saturation Voltage.
High speed switching Transistor SOT-23 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📁 HMBT2369 Similar Datasheet

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |