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HMBT2369, HMBT2369_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HMBT2369 Description

HI-SINCERITY MICROELECTRONICS CORP.HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6834 Issued Date : 1998.02.01 Revised Date : 2004.09.07 Pa.
The HMBT2369 is designed for general purpose switching and amplifier applications. Low Collector Saturation Voltage. High.

HMBT2369 Features

* Low Collector Saturation Voltage
* High speed switching Transistor SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW

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This datasheet PDF includes multiple part numbers: HMBT2369, HMBT2369_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT2369, HMBT2369_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
38.77 KB
Datasheet
HMBT2369_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HMBT2369, HMBT2369_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT2369-like datasheet