HMBT1015

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HMBT1015 General Description

The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings SOT-23

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (T.

HMBT1015 Datasheet (40.09 KB)

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HMBT1015

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Hi-Sincerity Mocroelectronics

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40.09 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Pa.

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HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HMBT1015 General Description

Datasheet Details

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HMBT1015 Distributor