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HPN2222A - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HPN2222A, a member of the HPN2222A_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications.

Features

  • Low Collector Saturation Voltage.
  • High Speed Switching.
  • For Complementary Use with PNP Type HPN2907A TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 625 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 75 V VCEO Collector to Emitter Voltage 40 V VEBO Emitter to Base Voltage 6.

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Datasheet preview – HPN2222A

Datasheet Details

Part number HPN2222A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 42.47 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HPN2222A Datasheet
Additional preview pages of the HPN2222A datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6118 Issued Date : 1992.10.23 Revised Date : 2002.04.15 Page No. : 1/4 HPN2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching • For Complementary Use with PNP Type HPN2907A TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................. 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)......
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