HSD1609, HSD1609_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6606 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Pag.

📥 Download Datasheet

HSD1609 Datasheet Preview — This datasheet PDF includes multiple part numbers: HSD1609, HSD1609_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HSD1609, HSD1609_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 42.85 KB
Datasheet: HSD1609_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HSD1609, HSD1609_Hi.
Please refer to the document for exact specifications by model.

Features

* Low frequency high voltage amplifier
* Complementary pair with HSB1109 Absolute Maximum Ratings (TA=25°C) TO-126ML
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipatio

HSD1609 Distributors

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HSD1609_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HSD1609-like datasheet