HSD1609 Datasheet - Hi-Sincerity Mocroelectronics

HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR

HSD1609 Features

* Low frequency high voltage amplifier

* Complementary pair with HSB1109 Absolute Maximum Ratings (TA=25°C) TO-126ML

* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipatio

Datasheet Details

HSD1609

Hi-Sincerity Mocroelectronics

42.85 KB

Npn epitaxial planar transistor.

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