* Low frequency high voltage amplifier
* Complementary pair with HSB1109 Absolute Maximum Ratings (TA=25°C) TO-126ML
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipatio
HSD1609
Hi-Sincerity Mocroelectronics
42.85 KB
Npn epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1609
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Pag.
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