| Part number | HSD1609S, HSD1609S_Hi |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 38.42 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HSD1609S_Hi-SincerityMocroelectronics.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: HSD1609S, HSD1609S_Hi. Please refer to the document for exact specifications by model. |
The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 900 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 160 V VCEO Collector to Emitter Voltage
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