HSD1609S

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSD1609S General Description

The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. Absolute Maximum Ratings TO-92

* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power D.

HSD1609S Datasheet (38.42 KB)

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Datasheet Details

Part number:

HSD1609S

Manufacturer:

Hi-Sincerity Mocroelectronics

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38.42 KB

Description:

Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609S NPN EPITAXIAL PLAN.

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HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HSD1609S General Description

Datasheet Details

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