Description
HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No.: 1/4 HSD1609S NPN EPITAXIAL PLAN.
The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.
Applications
* complementary pair with HSB1109S. Absolute Maximum Ratings
TO-92
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 900 mW
* Maximum Voltages and Currents (Ta=25°C)
