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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2008.04.09 Page No. : 1/5
HSD2118J
LOW VCE(sat) TRANSISTOR (20V, 5A)
Feature
• Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic • Complements the HSB1386J
Structure
Epitaxial Planar Type NPN Silicon Transistor
TO-252
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................................... 150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) ........
HSD2118J Datasheet
