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HE8050, HE8050_Hi NPN TRANSISTOR

HE8050 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6112 Issued Date : 1992.09.30 Revised Date : 2004.11.29 Page No.: 1/4 HE8050 NPN EPITAXIAL PLANAR.
The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. High total power dissipat.

HE8050 Features

* High total power dissipation (PT: 2W, TC=25°C)
* High collector current (IC: 1.5A) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (T

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HE8050, HE8050_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HE8050, HE8050_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
45.18 KB
Datasheet
HE8050_Hi-SincerityMocroelectronics.pdf
Description
NPN TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HE8050, HE8050_Hi.
Please refer to the document for exact specifications by model.

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NPN TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HE8050-like datasheet