HJ3055, HJ3055_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HJ3055 Description

HI-SINCERITY MICROELECTRONICS CORP.HJ3055 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6004 Issued Date : 1994.10.04 Revised Date : 2008.04.09 Page.
The HJ3055 is designed for general purpose of amplifier and switching applications. Maximum Te.

HJ3055 Applications

* Absolute Maximum Ratings (TA=25°C) TO-252
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage

📥 Download Datasheet

HJ3055 Datasheet Preview — This datasheet PDF includes multiple part numbers: HJ3055, HJ3055_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HJ3055, HJ3055_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 89.34 KB
Datasheet: HJ3055_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HJ3055, HJ3055_Hi.
Please refer to the document for exact specifications by model.

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