SFD2003T
DESCRIPTION
The SFD2003T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURES
- 30A,20V,RDS(on)(typ.)=8.8m@VGS=4.5V
- Excellent package for good heat dissipation
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- High density cell design for ultra low Rdson
- Special process technology for high ESD capability
- Exceptional on-resistance and maximum DC currentcapability
ORDERING INFORMATION
Part No. SFD2003T
Package TO-252-2L
Marking SFD2003T
Material Pb free
ABSOLUTE MAXIMUM RATINGS TC = 25℃ unless otherwise noted
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25°C TC = 70°C
Drain Current Pulsed (Note 1)
Maximum Power Dissipation Operation Junction Temperature Range Storage Temperature Range Thermal Characteristics
Symbol VDS VGS
PD TJ Tstg
Ratings 20 ±12 30 20
40 -55～+150...
