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SFD2006T - 60A 20V N-CHANNEL MOSFET

Datasheet Summary

Description

The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • 60A,20V,RDS(on)(typ. )=5.6m@VGS=4.5V.
  • Excellent package for good heat dissipation.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • High density cell design for ultra low Rdson.
  • Special process technology for high ESD capability SFD2006T D S G TO-252-2L.

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Datasheet preview – SFD2006T

Datasheet Details

Part number SFD2006T
Manufacturer HiSemicon
File Size 2.74 MB
Description 60A 20V N-CHANNEL MOSFET
Datasheet download datasheet SFD2006T Datasheet
Additional preview pages of the SFD2006T datasheet.

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Full PDF Text Transcription

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60A, 20V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ◆ 60A,20V,RDS(on)(typ.)=5.6m@VGS=4.5V ◆ Excellent package for good heat dissipation ◆Fully characterized avalanche voltage and current ◆ Good stability and uniformity with high EAS ◆ High density cell design for ultra low Rdson ◆ Special process technology for high ESD capability SFD2006T D S G TO-252-2L ORDERING INFORMATION Part No.
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