SFD2008T
DESCRIPTION
The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURES
- RDS(on)(typ.)=4.0m@VGS=4.5V RDS(on)(typ.)=6.5m@VGS=2.5V
- Excellent package for good heat dissipation
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- High density cell design for ultra low Rdson
- Special process technology for high ESD capability
Application
- Load Switch
- PWM Application
- Power management
12 33
1:Gate 2:Darin 3:Source
ORDERING INFORMATION
Part No. SFD2008T
Package TO-252-2L
Marking SFD2008T
Material Pb free
Packing Reel
ABSOLUTE MAXIMUM RATINGS (TC = 25℃ unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25°C TC = 100°C
Drain Current Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation
Operation Junction Temperature...
