SFD2008T Datasheet PDF - HiSemicon 80A 20V N-CHANNEL MOSFET Specs

SFD2008T - 80A 20V N-CHANNEL MOSFET

Datasheet Summary

Description

The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

RDS(on)(typ. )=4.0m@VGS=4.5V RDS(on)(typ. )=6.5m@VGS=2.5V.
Excellent package for good heat dissipation.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
High density cell design for ultra low Rdson.
Special process technology for high ESD capability.

Datasheet Details

Part number	SFD2008T
Manufacturer	HiSemicon
File Size	2.82 MB
Description	80A 20V N-CHANNEL MOSFET
Datasheet	SFD2008T Datasheet
Additional preview pages of the SFD2008T datasheet.

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Full PDF Text Transcription

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80A,20VN-CHANNELMOSFET SFD2008T GENERAL DESCRIPTION The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ◆ RDS(on)(typ.)=4.0m@VGS=4.5V RDS(on)(typ.)=6.5m@VGS=2.5V ◆ Excellent package for good heat dissipation ◆ Fully characterized avalanche voltage and current ◆ Good stability and uniformity with high EAS ◆ High density cell design for ultra low Rdson ◆ Special process technology for high ESD capability Application ◆ Load Switch ◆ PWM Application ◆ Power management 12 33 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No.

Published: Aug 26, 2025 |