2SA1082
Hitachi Semiconductor
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Silicon pnp transistor.
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2SA1080 - Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor
2SA1080
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement.
2SA1081 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1025, 2SA1081, 2SA1082
Silicon PNP Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544
Outline.
2SA1082 - Silicon PNP Power Transistor
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DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device
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APPLICATION.
2SA1082 - PNP Plastic Encapsulated Transistor
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Elektronische Bauelemente
2SA1082
-0.1 A , -120 V PNP Plastic Encapsulated Transistor
FEATURES
Low Frequency Amplifier
RoHS Compliant Product A s.
2SA1083 - Silicon PNP Transistor
(Hitachi Semiconductor)
2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC254.
2SA1083 - PNP Transistor
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2SA1083
-0.1 A, -60 V PNP Plastic Encapsulated Transistor
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Low Frequency Amplifier
RoHS Compliant Product A suf.
2SA1084 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC254.
2SA1085 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC254.
2SA100 - Ge PNP Drift Transistor
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2SA1001 - Silicon PNP Power Transistor
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2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.) ·Minimum.
