2SH11 Silicon N-Channel IGBT

Hitachi Semiconductor

Description

ADE *208 *274 (Z) 2SH11 Silicon N-Channel IGBT 1st.Edition Feb.1995 Application TO *220AB High speed power switching .
ge without notice.

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Datasheet Specifications

Part number: 2SH11
Manufacturer: Hitachi Semiconductor
File Size: 41.32 KB
Datasheet: 2SH11_HitachiSemiconductor.pdf
Description: Silicon N-Channel IGBT

Features

* 2
* High speed switching
* Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature

Applications

* ge without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in a

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