2SH12 Overview
ADE 208 275 (Z) 2SH12 Silicon N-Channel IGBT 1st. 1995 Application High speed power switching TO 220AB.
2SH12 Key Features
- High speed switching
- Low on saturation voltage
| Part number | 2SH12 |
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| Datasheet | 2SH12_HitachiSemiconductor.pdf |
| File Size | 43.12 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel IGBT |
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ADE 208 275 (Z) 2SH12 Silicon N-Channel IGBT 1st. 1995 Application High speed power switching TO 220AB.