Datasheet Details
| Part number | 2SH12 |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 43.12 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet |
 2SH12 Datasheet
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General Description
ars no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2.
Products and product specifications may be subject to change without notice.
Key Features
- High speed switching.
- Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 15 30 60 150.
- 55 to +150 Unit V V A A W °C °C.