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2SH12 Silicon N-Channel IGBT

2SH12 Description

ADE *208 *275 (Z) 2SH12 Silicon N-Channel IGBT 1st.Edition Feb.1995 Application High speed power switching TO *220AB .
ars no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the inf.

2SH12 Features

* High speed switching
* Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature

2SH12 Applications

* ars no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received th

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Datasheet Details

Part number
2SH12
Manufacturer
Hitachi Semiconductor
File Size
43.12 KB
Datasheet
2SH12_HitachiSemiconductor.pdf
Description
Silicon N-Channel IGBT

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Silicon N-Channel IGBT Hitachi Semiconductor
Hitachi Semiconductor 2SH12-like datasheet