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2SH12

Silicon N-Channel IGBT

2SH12 Features

* High speed switching

* Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature

2SH12 General Description

ars no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received th.

2SH12 Datasheet (43.12 KB)

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Datasheet Details

Part number:

2SH12

Manufacturer:

Hitachi Semiconductor

File Size:

43.12 KB

Description:

Silicon n-channel igbt.

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2SH12 Silicon N-Channel IGBT Hitachi Semiconductor

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