2SH12 - Silicon N-Channel IGBT

Hitachi Semiconductor

The 2SH12 by Hitachi Semiconductor is a Silicon N-Channel IGBT. Below is the official datasheet preview.

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2SH12 Silicon N-Channel IGBT by Hitachi Semiconductor - Datasheet Preview — Official preview page of the **2SH12** Silicon N-Channel IGBT datasheet (Hitachi Semiconductor).

Datasheet Details

Part number	2SH12
Manufacturer	Hitachi Semiconductor
File Size	43.12 KB
Description	Silicon N-Channel IGBT
Datasheet	2SH12_HitachiSemiconductor.pdf
Additional preview pages of the 2SH12 datasheet.

2SH12 Product details

Description

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Features

High speed switching.
Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 15 30 60 150.
55 to +150 Unit V V A A W °C °C.

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Published: Mar 30, 2005 |