2SJ363 Overview
2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching.
2SJ363 Key Features
- Low on-resistance
- Low drive current
- 4 V gate drive device can be driven from 5 V source
Datasheet Details
| Part number | 2SJ363 |
|---|---|
| Datasheet | 2SJ363_HitachiSemiconductor.pdf |
| File Size | 37.85 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | P-Channel MOSFET |
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