2SJ363 P-Channel MOSFET

Hitachi Semiconductor

Description

2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching .

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Datasheet Specifications

Part number: 2SJ363
Manufacturer: Hitachi Semiconductor
File Size: 37.85 KB
Datasheet: 2SJ363_HitachiSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Low on-resistance
* Low drive current
* 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drai

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2SJ363 P-Channel MOSFET Hitachi Semiconductor

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