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2SJ363 P-Channel MOSFET

2SJ363 Description

2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching .

2SJ363 Features

* Low on-resistance
* Low drive current
* 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drai

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Datasheet Details

Part number
2SJ363
Manufacturer
Hitachi Semiconductor
File Size
37.85 KB
Datasheet
2SJ363_HitachiSemiconductor.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET Hitachi Semiconductor
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