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2SJ386 - P-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ386 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage tempera.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ387 P-Channel MOSFET
2SJ387L P-Channel MOSFET
2SJ387S P-Channel MOSFET
2SJ317 P-Channel MOSFET
2SJ319 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ386 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings –30 ±20 –3 –5 –3 0.