2SK1296 - Silicon N-Channel MOS FET

Product Overview

Hitachi Semiconductor

Datasheet Details

Part number	2SK1296
Manufacturer	Hitachi Semiconductor
File Size	75.93 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK1296 Datasheet
Additional preview pages of the 2SK1296 datasheet.

Product details

Description

2SK1296 Power vs.Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 10 Drain Current ID (A) 100 50 20 10 5 2 1.0 PW µs 10 0 www.DataSheet4U.com 100 µs 1 = s m D C 10 O m pe s ra (1 50 tio Operation in this area is limited by RDS (on) Ta = 25°C n Sh (T ot ) C = 25 °C ) 0 50 100 Case Temperature TC (°C) 150 0.5 0.1 100 0.3 1.0 3 10 30 Drain to Source Voltag

Features

www. DataSheet4U. com.
Low on-resistance High speed switching Low drive current 4 V gate drive device.
Can be driven from 5 V source.
Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel di.

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Published: Oct 31, 2008 |