Datasheet Details
- Part number
- 2SK1296
- Manufacturer
- Hitachi Semiconductor
- File Size
- 75.93 KB
- Datasheet
- 2SK1296_HitachiSemiconductor.pdf
- Description
- Silicon N-Channel MOS FET
2SK1296 Description
2SK1296 Silicon N-Channel MOS FET Application TO *220AB High speed power switching .
2SK1296
Power vs.
2SK1296 Features
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* Low on-resistance High speed switching Low drive current 4 V gate drive device
* Can be driven from 5 V source
* Suitable for motor drive, DC-DC converter, power switch and solenoid drive
2
1 2 3
1
1. Gate 2. Drain (Fla
2SK1296 Applications
* 2SK1296
Power vs. Temperature Derating 150 Channel Dissipation Pch (W)
Maximum Safe Operation Area
500 200
10
Drain Current ID (A)
100 50 20 10 5 2 1.0
PW
µs
10 0
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100
µs
1
=
s m
D
C
10
O
m
pe
s
r
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