2SK1296 Datasheet - Hitachi Semiconductor

2SK1296 Silicon N-Channel MOS FET

* * * * * * * * 2SK1296 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 10 Drain Current ID (A) 100 50 20 10 5 2 1.0 PW µs 10 0 www.DataSheet4U.com 100 µs 1 = s m D C 10 O m pe s r.

2SK1296 Features

* www.DataSheet4U.com

* Low on-resistance High speed switching Low drive current 4 V gate drive device

* Can be driven from 5 V source

* Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Fla

2SK1296_HitachiSemiconductor.pdf

2SK1296 Datasheet Preview — Preview of 2SK1296 PDF

Datasheet Details

Part number:

2SK1296

Manufacturer:

Hitachi Semiconductor

File Size:

75.93 KB

Description:

Silicon n-channel mos fet.

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2SK1296 2SK1296 Silicon N-Channel MOS FET Hitachi Semiconductor

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