2SK1296 Silicon N-Channel MOS FET

Hitachi Semiconductor

Description

2SK1296 Silicon N-Channel MOS FET Application TO *220AB High speed power switching .
2SK1296 Power vs.

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Datasheet Specifications

Part number: 2SK1296
Manufacturer: Hitachi Semiconductor
File Size: 75.93 KB
Datasheet: 2SK1296_HitachiSemiconductor.pdf
Description: Silicon N-Channel MOS FET

Features

* www. DataSheet4U. com
* Low on-resistance High speed switching Low drive current 4 V gate drive device
* Can be driven from 5 V source
* Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Fla

Applications

* 2SK1296 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 10 Drain Current ID (A) 100 50 20 10 5 2 1.0 PW µs 10 0 www. DataSheet4U. com 100 µs 1 = s m D C 10 O m pe s r

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2SK1296 Silicon N-Channel MOS FET Hitachi Semiconductor

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