Click to expand full text
2SK2059(L), 2SK2059(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK2059(L), 2SK2059(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.