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2SK2055 - N-Channel MOSFET

Key Features

  • New package intermediate between small-signal and power models.
  • Can be directly driven by output of 5-V IC.
  • Low ON resistance RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A 1.0 0.5 ±0.1 S D 0.85 ±0.1 G 5.4 ±0.25 0.55 0.5 ±0.1 0.4 ±0.05 2.1 4.2 Marking: NA3.

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Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2055 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2055 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES • New package intermediate between small-signal and power models • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A 1.0 0.5 ±0.1 S D 0.85 ±0.1 G 5.4 ±0.25 0.55 0.5 ±0.1 0.4 ±0.05 2.1 4.