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2SK2070 - N-Channel MOSFET

Key Features

  • New package intermediate between small-signal and power models.
  • Can be directly driven by output of 5-V IC.
  • Low ON resistance RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A 0.8 ±0.1 3.0 MAX. 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 0.55 ±0.1 1.7 1.7 4.0 MAX. 1.5 G D S.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2040 SWITCHING N-CHANNEL POWER MOS FET
2SK2053 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2070 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2070 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 2.0 FEATURES • New package intermediate between small-signal and power models • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A 0.8 ±0.1 3.0 MAX. 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 0.55 ±0.1 1.7 1.7 4.0 MAX. 1.