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2SK2053 - N-Channel MOSFET

Key Features

  • New package intermediate between small signal and power types.
  • Gate can be driven by 1.5 V.
  • Low ON resistance RDS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A RDS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
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Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2053 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2053 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES • New package intermediate between small signal and power types • Gate can be driven by 1.5 V • Low ON resistance RDS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A RDS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A EQUIVALENT CURCUIT Drain (D) 1.0 S 0.5 ±0.1 D 0.85 ±0.1 G 0.5 ±0.1 5.4 ±0.25 0.55 0.4 ±0.05 Marking: NA1 2.1 4.