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2SK2390 - Silicon N-Channel MOS FET

Hitachi Semiconductor

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Datasheet Details

Part number	2SK2390
Manufacturer	Hitachi Semiconductor
File Size	88.59 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK2390_HitachiSemiconductor.pdf

2SK2390 Product details

Features

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S www. DataSheet4U. com 2SK2390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalan.

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Published: Jul 24, 2009 |