Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter
✔ 2SK2390 Application
based on the examples described herein. 5. No license is granted by implication or otherwise under any paten
2SK2391, Toshiba Semiconductor
2SK2391
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2391
Chopper Regulator, DC−DC Converter and Motor Drive Application.
2SK2393, Hitachi Semiconductor
2SK2393
Silicon N-Channel MOS FET
Application
High voltage / High speed power switching
Features
• • • • • Low on-resistance, High breakdown voltage.
2SK2393, Renesas Technology
2SK2393
Silicon N Channel MOS FET
Application
High voltage / High speed power switching
Features
• Low on-resistance, High breakdown voltage • High sp.
2SK2394, ON Semiconductor
DATA SHEET .onsemi.
N-Channel JFET
15 V, 10 to 20 mA, 38 mS, CP
2SK2394
Features
• Large ⎪yfs⎪ • Small Ciss • Small−Sized Package Permitting 2.
2SK2396A, Renesas
N MOS UHF TV
MOS Silicon Power MOS Field Effect Transistor
2SK2396A
UHF
PO = 100 W, GL = 12 dB, h D = 50
TYP
VDD = 30 V, f = 860 MHz, IDQ = 150 m.
