* Largeyfs.
* Small Ciss.
* Small-sized package permitting 2SK2394-applied sets to be made small slim.
* Ultralow noise figure. Specifications Package Dimensions unit:mm 2050A [2SK2394] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1 1 : Source 2 : Drain 3 :
2SK2394
Sanyo Semicon Device
109.02 KB
N-channel junction silicon fet.
Ordering number:EN4839A
N-Channel Junction Silicon FET
2SK2394
Low-Noise HF Amplifier Applications
Applications
* AM tuner RF amplifier.
* L.
📁 Related Datasheet
2SK2390 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
..
2SK2390
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
• • • • • • Low on-resistance H.
2SK2391 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK2391
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2391
Chopper Regulator, DC−DC Converter and Motor Drive Application.
2SK2393 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2393
Silicon N-Channel MOS FET
Application
High voltage / High speed power switching
Features
• • • • • Low on-resistance, High breakdown voltage.
2SK2393 - Silicon N-Channel MOSFET
(Renesas Technology)
2SK2393
Silicon N Channel MOS FET
Application
High voltage / High speed power switching
Features
• Low on-resistance, High breakdown voltage • High sp.
2SK2394 - N-Channel JFET
(ON Semiconductor)
DATA SHEET .onsemi.
N-Channel JFET
15 V, 10 to 20 mA, 38 mS, CP
2SK2394
Features
• Large ⎪yfs⎪ • Small Ciss • Small−Sized Package Permitting 2.
2SK2395 - N-Channel Junction Silicon FET
(Sanyo Semicon Device)
Ordering number:ENN4840
N-Channel Junction Silicon FET
2SK2395
Low-Noise HF Amplifier Applications
Applications
· AM tuner RF amplifier. · Low-noise.
2SK2396 - Silicon Power MOSFET
(Renesas)
.
2SK2396A - Silicon Power MOSFET
(Renesas)
N MOS UHF TV
MOS Silicon Power MOS Field Effect Transistor
2SK2396A
UHF
PO = 100 W, GL = 12 dB, h D = 50
TYP
VDD = 30 V, f = 860 MHz, IDQ = 150 m.
