2SK2922 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2922
Manufacturer	Hitachi Semiconductor
File Size	36.34 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2922_HitachiSemiconductor.pdf

High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz).
Compact package capable of surface mounting Outline UPAK 3 2 1 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2922 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature S.

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Published: Mar 30, 2005 |