2SK2920 Datasheet, Transistor, Toshiba Semiconductor

2SK2920 Features

• Transistor led under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are stric

PDF File Details

Part number:

2SK2920

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

385.90kb

Download:

📄 Datasheet

Description:

Silicon n-channel mos type field effect transistor.

2SK2920 Application

• Applications z 4 V gate drive z Low drain-source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.5 S (t

TAGS

2SK2920

Toshiba Semiconductor

📁 Related Datasheet

2SK2922 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675(Z) 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency .

2SK2925 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =.

2SK2925 - Silicon N-Channel MOSFET (Renesas)
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 .

2SK2925L - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =.

2SK2925L - Silicon N-Channel MOSFET (Renesas)
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 .

2SK2925S - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =.

2SK2925S - N-Channel Silicon MOSFET (Guangdong Kexin Industrial)
.DataSheet.co.kr SMD Type N-Channel Silicon MOSFET 2SK2925S IC MOSFET Features Low on-resistance RDS =0.060 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 .

2SK2925S - Silicon N-Channel MOSFET (Renesas)
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 .

2SK2926 - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω t.

2SK2926L - Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω t.