2SK3082 - N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK3082
Manufacturer	Hitachi Semiconductor
File Size	57.08 KB
Description	N-Channel MOSFET
Datasheet	2SK3082_HitachiSemiconductor.pdf

Low on-resistance RDS(on) = 0.055 Ω typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 10 40 10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avala.

📁 2SK3082 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |