C2979 Datasheet - Hitachi Semiconductor

C2979 2SC2979

2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ra.

C2979 Datasheet (39.45 KB)