HE8807FL - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes

Hitachi Semiconductor

Datasheet Details

Part number	HE8807FL
Manufacturer	Hitachi Semiconductor
File Size	53.13 KB
Description	(HE8807FL/SG) GaAlAs Infrared Emitting Diodes
Datasheet	HE8807FL_HitachiSemiconductor.pdf

The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.

High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3.
20 to +85.
40 to +100 Units mA V °C °C 245 HE8807SG/FL Optical and Electrical Characteristics (TC = 25°C) Item Optical output po.

📁 HE8807FL Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Dec 30, 2006 |