HE8807FL (HE8807FL/SG) GaAlAs Infrared Emitting Diodes

Hitachi Semiconductor

Description

www.DataSheet4U.com HE8807SG/FL GaAlAs Infrared Emitting Diodes .
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.

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Datasheet Specifications

Part number: HE8807FL
Manufacturer: Hitachi Semiconductor
File Size: 53.13 KB
Datasheet: HE8807FL_HitachiSemiconductor.pdf
Description: (HE8807FL/SG) GaAlAs Infrared Emitting Diodes

Features

* High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage

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HE8807FL HE8807FL GaAlAs Infrared Emitting Diodes Hitachi Semiconductor

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