HE8812SG GaAlAs Infrared Emitting Diode

Hitachi Semiconductor

Description

www.DataSheet4U.com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan.2003 .
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.

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Datasheet Specifications

Part number: HE8812SG
Manufacturer: Hitachi Semiconductor
File Size: 168.39 KB
Datasheet: HE8812SG_HitachiSemiconductor.pdf
Description: GaAlAs Infrared Emitting Diode

Features

* High efficiency and high output power Package Type
* HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3
* 20 to +60
* 40 to

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HE8812SG GaAlAs Infrared Emitting Diode Hitachi Semiconductor

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