Datasheet4U Logo Datasheet4U.com

HE8812SG GaAlAs Infrared Emitting Diode

📥 Download Datasheet Datasheet Preview Page 1

Description

www.DataSheet4U.com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan.2003 .
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.

📥 Download Datasheet

Preview of HE8812SG PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
HE8812SG
Manufacturer
Hitachi Semiconductor
File Size
168.39 KB
Datasheet
HE8812SG_HitachiSemiconductor.pdf
Description
GaAlAs Infrared Emitting Diode

Features

* High efficiency and high output power Package Type
* HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3
* 20 to +60
* 40 to

HE8812SG Distributors

📁 Related Datasheet

  • HE8811 - GaAlAs Infrared Emitting Diode (Hitachi)
  • HE801 - Connectors (Amphenol)
  • HE80128L - 8-bit CMOS micro-controller (Jess Technology)
  • HE80128M - 8-bit CMOS micro-controller (Jess Technology)
  • HE80128S - 8-bit CMOS micro-controller (Jess Technology)
  • HE80170L - HE80170L (Jess Technology)

📌 All Tags

GaAlAs Infrared Emitting Diode Hitachi Semiconductor
Hitachi Semiconductor HE8812SG-like datasheet