HE8811 GaAlAs Infrared Emitting Diode

Hitachi

Description

www.DataSheet4U.com HE8811 GaAlAs Infrared Emitting Diode ODE-208-999B (Z) Rev.2 Mar.2005 .
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure.

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Datasheet Specifications

Part number: HE8811
Manufacturer: Hitachi
File Size: 212.31 KB
Datasheet: HE8811_Hitachi.pdf
Description: GaAlAs Infrared Emitting Diode

Features

* High-frequency response
* High efficiency and high output power
* Broad radiation pattern Package Type
* HE8811: SG1 Internal Circuit 1 2 HE8811 Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Sym

HE8811 Distributors

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HE8811 GaAlAs Infrared Emitting Diode Hitachi

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