HE8811 - GaAlAs Infrared Emitting Diode

Hitachi

Datasheet Details

Part number	HE8811
Manufacturer	Hitachi
File Size	212.31 KB
Description	GaAlAs Infrared Emitting Diode
Datasheet	HE8811_Hitachi.pdf

The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure.

High-frequency response.
High efficiency and high output power.
Broad radiation pattern Package Type.
HE8811: SG1 Internal Circuit 1 2 HE8811 Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3.
20 to +60.
40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forwa.

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Published: Dec 30, 2006 |