K2586 - 2SK2586

Hitachi Semiconductor

Datasheet Details

Low on-resistance.
RDS(on) = 7 m typ.
High speed switching.
4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage te.

📁 K2586 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Feb 19, 2016 |