* 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2cc High efficiency : 40% Typ at 32.5 dBm Wide gain control range : 70 dB Typ Low voltage operation : 3.5 V Pin Arrangement
* RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4:
PF0414B
Hitachi Semiconductor
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Mos fet power amplifier module for dcs 1800 handy phone.
PF0414B
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
ADE-208-432C (Z) 4th Edition December 1997 Application
For DCS 1800 class1 1710 to 17.
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