BB101M Datasheet - Hitachi

BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB101M Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. S

Datasheet Details

BB101M

Hitachi

48.11 KB

Build in biasing circuit mos fet ic uhf rf amplifier.

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BB101M Build Biasing Circuit MOS FET UHF Amplifier Hitachi

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