Part number:
BB101M
Manufacturer:
Hitachi
File Size:
48.11 KB
Description:
Build in biasing circuit mos fet ic uhf rf amplifier.
* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. S
BB101M
Hitachi
48.11 KB
Build in biasing circuit mos fet ic uhf rf amplifier.
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