BB101M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi

Datasheet Details

Part number	BB101M
Manufacturer	Hitachi
File Size	48.11 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB101M_HitachiSemiconductor.pdf

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Cha.

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Published: Jun 3, 2005 |