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BB102M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Datasheet Summary

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain.
  • Note 1 Marking is “BW.
  • ”.
  • Note 2 BB302M is individual type number of.

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Datasheet Details

Part number BB102M
Manufacturer Hitachi
File Size 64.54 KB
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet download datasheet BB102M Datasheet
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Full PDF Text Transcription

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BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW–”. • Note 2 BB302M is individual type number of HITACHI BBFET.
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