BB102M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi

Datasheet Details

Part number	BB102M
Manufacturer	Hitachi
File Size	64.54 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB102M_HitachiSemiconductor.pdf

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain.
Note 1 Marking is “BW.
”.
Note 2 BB302M is individual type number of.

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Published: Jun 3, 2005 |