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BB102C Datasheet - Hitachi

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB102C Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

* Provide mini mold packages;

BB102C Datasheet (62.38 KB)

Preview of BB102C PDF

Datasheet Details

Part number:

BB102C

Manufacturer:

Hitachi

File Size:

62.38 KB

Description:

Build in biasing circuit mos fet ic uhf rf amplifier.

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BB102C Build Biasing Circuit MOS FET UHF Amplifier Hitachi

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