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K3380 Silicon N Channel MOS FET

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Description

2SK3380 Silicon N Channel MOS FET High Speed Switching .

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Datasheet Specifications

Part number
K3380
Manufacturer
Hitachi
File Size
23.75 KB
Datasheet
K3380-Hitachi.pdf
Description
Silicon N Channel MOS FET

Features

* Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
* 4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1st. Edition. June 1999 D G S 123 1. Source 2. Drain 3. Gate 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

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