Part number:
K3380
Manufacturer:
Hitachi
File Size:
23.75 KB
Description:
Silicon n channel mos fet.
* Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
* 4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1st.Edition. June 1999 D G S 123 1. Source 2. Drain 3. Gate 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
K3380
Hitachi
23.75 KB
Silicon n channel mos fet.
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