MBM200GS6AW
IGBT MODU ODULE
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 4-Fast-on Terminal #110
G2 E2
FEAT RES EATURES
- High speed and low saturation voltage.
- low noise due to built-in free-wheeling diode
- ultra soft fast recovery diode(USFD).
- Isolated head sink (terminal to base).
3-M5 2- φ 5.6
80 16
E2
C1
E1
C2E1
G1
7 12 6 35
23 39.5 φ 0.8
C2E1
G2 E2 E2 C1 E1 G1
Weight: 200 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO
- Unit
V V A A W °C °C VRMS N.m (kgf.cm)
600 ±20 200 400 200 400 600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) 1.96(20)
DC 1ms DC 1ms
12 17 25 35
(1)
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting
(2) (3)
Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Remended Value 1.67N.m(17kgf.cm)...
