MBN400A6 Datasheet, Range, Hitachi

PDF File Details

Part number:

MBN400A6

Manufacturer:

Hitachi

File Size:

141.30kb

Download:

📄 Datasheet

Description:

Igbt module range.

Datasheet Preview: MBN400A6 📥 Download PDF (141.30kb)

TAGS

MBN400A6
IGBT
Module
Range
Hitachi

📁 Related Datasheet

MBN400C20 - IGBT Module / Silicon N Channel IGBT (Hitachi)
IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) *.

MBN400C33A - IGBT Module / Silicon N Channel IGBT (Hitachi)
IGBT MODULE MBN400C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) .

MBN400GR12 - IGBT Module (Hitachi)
Hitachi IGBT Module / Silicon N-Channel IGBT Spec. No. IGBT-SP-99026(R1) MBN400GR12 [Rated 400A/1200V, Single-pack type] FEATURES · Low saturation .

MBN400GR12AW - IGBT Module (Hitachi)
IGBT MODU ODULE MBN400GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise.

MBN400GR12BW - IGBT Module (Hitachi)
IGBT MODU ODULE MBN400GS12BW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise.

MBN1200D25B - Silicon N-Channel IGBT (Hitachi)
IGBT MODULE MBN1200D25B Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).

MBN1200D33A - Silicon N-Channel IGBT (Hitachi)
IGBT MODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).

MBN1200GS12AW - Silicon N-Channel IGBT (Hitachi)
IGBT MODU ODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES * High speed and .

MBNP01Q40Q8 - Complex Transistors (CYStech Electronics)
CYStech Electronics Corp. Complex Transistors MBNP01Q40Q8 Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 1/11 Feat.

MBNP2026G6 - N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device (CYStech Electronics)
CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts