MBNP2026G6 N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device

CYStech Electronics

Description

CYStech Electronics Corp.Spec.No.: C197G6 Issued Date : 2011.01.20 Revised Date : Page No.: 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT .
The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combinat.

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Datasheet Specifications

Part number: MBNP2026G6
Manufacturer: CYStech Electronics
File Size: 269.02 KB
Datasheet: MBNP2026G6-CYStechElectronics.pdf
Description: N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device

Features

* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
* Pb-free package Equivalent Circuit MBNP2026G6 Outline TSOP-6 C2 S1 D1 G：Gate B : Base S：Source E : Emitter D：Drain C : Collector B2 E2 G1 MBNP2026G6 CYStek Produc

MBNP2026G6 Distributors

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MBNP2026G6 N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device CYStech Electronics

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