MBNP2026G6 Datasheet - CYStech Electronics

MBNP2026G6 N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device

The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commerc.

MBNP2026G6 Features

* Simple drive requirement

* Low gate charge

* Low on-resistance

* Fast switching speed

* Pb-free package Equivalent Circuit MBNP2026G6 Outline TSOP-6 C2 S1 D1 G：Gate B : Base S：Source E : Emitter D：Drain C : Collector B2 E2 G1 MBNP2026G6 CYStek Produc

MBNP2026G6-CYStechElectronics.pdf