MBN1200GS12AW Datasheet (Hitachi) - Silicon N-Channel IGBT

MBN1200GS12AW, Silicon N-Channel IGBT

IGBT MODU ODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES High speed and low saturation voltage.

low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).

Isolated head sink (terminal to base).

E 110 C G 46.75 E 13 +1 37 -0.5 30 36 19 2-M8 E E Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Curren