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MBN1200GS12AW Datasheet - Hitachi

MBN1200GS12AW Silicon N-Channel IGBT

IGBT MODU ODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES High speed and low saturation voltage. low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). Isolated head sink (terminal to base). E 110 C G 46.75 E 13 +1 37 -0.5 30 36 19 2-M8 E E Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Curren.

MBN1200GS12AW_Hitachi.pdf

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Datasheet Details

Part number:

MBN1200GS12AW

Manufacturer:

Hitachi

File Size:

137.91 KB

Description:

Silicon n-channel igbt.

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