MBN1200D33A - Silicon N-Channel IGBT

Hitachi

Datasheet Details

High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).
low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
High speed,low loss IGBT module.
Low driving power due to low input capacitance MOS gate.
High reliability,high durability module.
Isolated head sink (terminal to base). C C 6-M8 3-M4 8-φ7 G Weight: 1,200 (g).

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Published: Mar 3, 2006 |