MBN1200D25B Datasheet, Igbt, Hitachi

MBN1200D25B Features

  • Igbt
  • High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles)
  • low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
  • High s

PDF File Details

Part number:

MBN1200D25B

Manufacturer:

Hitachi

File Size:

74.38kb

Download:

📄 Datasheet

Description:

Silicon n-channel igbt.

Datasheet Preview: MBN1200D25B 📥 Download PDF (74.38kb)
Page 2 of MBN1200D25B

MBN1200D25B Application

  • Applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semicond

TAGS

MBN1200D25B
Silicon
N-Channel
IGBT
Hitachi

📁 Related Datasheet

MBN1200D33A - Silicon N-Channel IGBT (Hitachi)
IGBT MODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).

MBN1200GS12AW - Silicon N-Channel IGBT (Hitachi)
IGBT MODU ODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES * High speed and .

MBN400A6 - IGBT Module Range (Hitachi)
.

MBN400C20 - IGBT Module / Silicon N Channel IGBT (Hitachi)
IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) *.

MBN400C33A - IGBT Module / Silicon N Channel IGBT (Hitachi)
IGBT MODULE MBN400C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) .

MBN400GR12 - IGBT Module (Hitachi)
Hitachi IGBT Module / Silicon N-Channel IGBT Spec. No. IGBT-SP-99026(R1) MBN400GR12 [Rated 400A/1200V, Single-pack type] FEATURES · Low saturation .

MBN400GR12AW - IGBT Module (Hitachi)
IGBT MODU ODULE MBN400GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise.

MBN400GR12BW - IGBT Module (Hitachi)
IGBT MODU ODULE MBN400GS12BW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise.

MBNP01Q40Q8 - Complex Transistors (CYStech Electronics)
CYStech Electronics Corp. Complex Transistors MBNP01Q40Q8 Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 1/11 Feat.

MBNP2026G6 - N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device (CYStech Electronics)
CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts