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MBN1200D25B Silicon N-Channel IGBT

MBN1200D25B Description

IGBT MODULE MBN1200D25B Silicon N-channel IGBT OUTLINE DRAWING Unit in mm .

MBN1200D25B Features

* High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles)
* low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
* High speed,low loss IGBT module.
* Low driving power due to low input capacitance MOS gate.
* High reliability,high durability

MBN1200D25B Applications

* of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any paten

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Datasheet Details

Part number
MBN1200D25B
Manufacturer
Hitachi
File Size
74.38 KB
Datasheet
MBN1200D25B_Hitachi.pdf
Description
Silicon N-Channel IGBT

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Silicon N-Channel IGBT Hitachi
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