MBN1200D25B - Silicon N-Channel IGBT

Hitachi

Datasheet Details

High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).
low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
High speed,low loss IGBT module.
Low driving power due to low input capacitance MOS gate.
High reliability,high durability module.
Isolated head sink (terminal to base). Weight: 1,200 (g) C C G E 6-M8 3-M4 8-φ7.

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Published: Mar 3, 2006 |