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2SJ483 P-Channel MOSFET

2SJ483 Description

2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st.Edition .

2SJ483 Features

* Low on-resistance R DS(on) = 0.08Ω typ (at VGS =
* 10 V, I D =
* 2.5 A)
* 4V gate drive devices.
* Large current capacitance ID =
* 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximum Ratings (Ta = 25°C) Item Dra

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Datasheet Details

Part number
2SJ483
Manufacturer
Hitachi Semiconductor
File Size
43.78 KB
Datasheet
2SJ483_HitachiSemiconductor.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET Hitachi Semiconductor
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