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HMC358MS8G - MMIC VCO

This page provides the datasheet information for the HMC358MS8G, a member of the HMC358MS8GE MMIC VCO family.

Datasheet Summary

Description

The HMC358MS8G & HMC358MS8GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC358MS8G & HMC358MS8GE integrate resonators, negative resistance devices, varactor diodes, and buffer amplifiers.

Features

  • Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 100 mA 15mm2 MSOP8G SMT Package Typical.

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Datasheet preview – HMC358MS8G

Datasheet Details

Part number HMC358MS8G
Manufacturer Hittite
File Size 217.64 KB
Description MMIC VCO
Datasheet download datasheet HMC358MS8G Datasheet
Additional preview pages of the HMC358MS8G datasheet.

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Full PDF Text Transcription

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HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Features Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 100 mA 15mm2 MSOP8G SMT Package Typical Applications Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as: • UNII & Pt. to Pt. Radios • 802.11a & HiperLAN WLAN • VSAT Radios Functional Diagram General Description The HMC358MS8G & HMC358MS8GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC358MS8G & HMC358MS8GE integrate resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.
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