CS12N65FA9H - Silicon N-Channel Power MOSFET

Huajin Discrete Devices

CS12N65FA9H Datasheet Preview — Preview of CS12N65FA9H PDF

Datasheet Details

Part number	CS12N65FA9H
Manufacturer	Huajin Discrete Devices
File Size	222.35 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS12N65FA9H-HuajinDiscreteDevices.pdf

CS12N65FA9H Product details

Description

CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test.

📁 CS12N65FA9H Similar Datasheet

CS12N65FA9R - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS12N65F - N-Channel MOSFET (BLUE ROCKET ELECTRONICS)
CS12N65A0R - Silicon N-Channel Power MOSFET (CR Micro)
CS12N65A8H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS12N65A8R - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
CS12N65ARR - Silicon N-Channel Power MOSFET (CR Micro)
CS12N60 - N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
CS12N60A8H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)

Other Datasheets by Huajin Discrete Devices

Published: Jun 13, 2015 |