3DD4515B1D-H Datasheet (193.18 KB)
3DD4515B1D-H
Huajing Microelectronics
193.18 KB
Silicon npn bipolar transistor.
NPN
3DD4515 B1D-H
○R
3DD4515 B1D-H NPN ， ， ， 、。
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-10℃～40℃ 1 265℃
＜85％
V.
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: V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Volta.
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R
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MAIN CHARACTERISTICS
Package
IC VCEO PC(TO-3PB)/TO-247)
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NPN
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○R
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● ● ● ● ●
● ● ●
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Ptot （Tc=25℃）
450 1.5 50
V A W
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-10℃～40.
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-10.
