3DD4515 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 3DD4515 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Minimum.

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Datasheet Specifications

Part number: 3DD4515
Manufacturer: Inchange Semiconductor
File Size: 214.58 KB
Datasheet: 3DD4515-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Co

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3DD4515 Silicon NPN Power Transistor Inchange Semiconductor

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