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3DD4515

Silicon NPN Power Transistor

3DD4515 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for power amplifier,high speed switching and reg.

3DD4515 Datasheet (214.58 KB)

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Datasheet Details

Part number:

3DD4515

Manufacturer:

Inchange Semiconductor

File Size:

214.58 KB

Description:

Silicon npn power transistor.

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3DD4515 Silicon NPN Power Transistor Inchange Semiconductor

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