Datasheet4U Logo Datasheet4U.com

3DD4515 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

3DD4515 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier,high speed switching and reg.

3DD4515 Datasheet (214.58 KB)

Preview of 3DD4515 PDF

Datasheet Details

Part number:

3DD4515

Manufacturer:

Inchange Semiconductor

File Size:

214.58 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

3DD4513A1D Silicon NPN Transistor (Huajing Microelectronics)

3DD4513A6D Silicon NPN Transistor (Huajing Microelectronics)

3DD4515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (JILIN SINO)

3DD4515A1 Silicon NPN Transistor (Huajing Microelectronics)

3DD4515A3 Silicon NPN bipolar transistor (Huajing Microelectronics)

3DD4515A6 Silicon NPN Transistor (Huajing Microelectronics)

3DD4515B1D-H Silicon NPN bipolar transistor (Huajing Microelectronics)

3DD4515E1-H Silicon NPN bipolar transistor (Huajing Microelectronics)

3DD4515E3-H Silicon NPN bipolar transistor (Huajing Microelectronics)

3DD4518A1D Silicon NPN Transistor (Huajing Microelectronics)

TAGS

3DD4515 Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

3DD4515 Datasheet Preview Page 2

3DD4515 Distributor