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3DD4515 Datasheet - Inchange Semiconductor

3DD4515 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier,high speed switching and reg.

3DD4515-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

3DD4515

Manufacturer:

Inchange Semiconductor

File Size:

214.58 KB

Description:

Silicon npn power transistor.

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3DD4515 3DD4515 Silicon NPN Power Transistor Inchange Semiconductor

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