3DD4515 Datasheet, Transistor, Inchange Semiconductor

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3DD4515

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)

Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(M

3DD4515 Application

• Applications
• Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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3DD4515

Inchange Semiconductor

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