3DD401 Datasheet - INCHANGE

3DD401, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor 3DD401 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device p.

datasheet Preview Page 1 from Datasheet4u.com

3DD401-INCHANGE.pdf

3DD401 Datasheet Preview — Preview of 3DD401 PDF

Datasheet Details

Part number:

3DD401

Manufacturer:

INCHANGE

File Size:

217.40 KB

Description:

Silicon NPN Power Transistor

Applications

* Power amplifier applications.
* Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Curr

3DD401 Distributors

📁 Related Datasheet

3DD4013A1D 3DD4013A6D 3DD4013B1D 3DD4018A1D 3DD4030A3 3DD4040A3-H

📌 All Tags

3DD401 Silicon NPN Power Transistor INCHANGE

INCHANGE 3DD401-like datasheet