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3DD401 Datasheet - INCHANGE

3DD401 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power amplifier applications. *Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

3DD401-INCHANGE.pdf

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Datasheet Details

Part number:

3DD401

Manufacturer:

INCHANGE

File Size:

217.40 KB

Description:

Silicon npn power transistor.

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