3DD401 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 3DD401 .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 3DD401
Manufacturer: INCHANGE
File Size: 217.40 KB
Datasheet: 3DD401-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Power amplifier applications.
* Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Curr

3DD401 Distributors

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3DD401 Silicon NPN Power Transistor INCHANGE

INCHANGE 3DD401-like datasheet